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At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

At-wavelength interferometric characterization of a new 4×-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Se...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-11, Vol.19 (6), p.2396-2400
Main Authors: Naulleau, Patrick, Goldberg, Kenneth A., Anderson, Erik H., Batson, Phillip, Denham, Paul E., Jackson, Keith H., Gullikson, Eric M., Rekawa, Senajith, Bokor, Jeffrey
Format: Article
Language:English
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Summary:At-wavelength interferometric characterization of a new 4×-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory’s Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wave front characterization, we also present wave front measurements performed with lateral shearing interferometry, the chromatic dependence of the wave front error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1421545