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At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic
At-wavelength interferometric characterization of a new 4×-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Se...
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Published in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-11, Vol.19 (6), p.2396-2400 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | At-wavelength interferometric characterization of a new 4×-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory’s Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wave front characterization, we also present wave front measurements performed with lateral shearing interferometry, the chromatic dependence of the wave front error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry. |
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ISSN: | 0734-211X 1071-1023 1520-8567 |
DOI: | 10.1116/1.1421545 |