Deposition of Ga2O3−x ultrathin films on GaAs by e-beam evaporation

Gallium oxide films 20 Å in thickness were deposited onto GaAs substrates in ultra high vacuum (UHV) via e-beam evaporation from a monolithic high-purity source. The substrates were prepared by molecular-beam epitaxy and transferred to the oxide film deposition site in a wholly UHV environment. The...

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Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-05, Vol.20 (3), p.809-813
Main Authors: Oldham, N. C., Hill, C. J., Garland, C. M., McGill, T. C.
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description Gallium oxide films 20 Å in thickness were deposited onto GaAs substrates in ultra high vacuum (UHV) via e-beam evaporation from a monolithic high-purity source. The substrates were prepared by molecular-beam epitaxy and transferred to the oxide film deposition site in a wholly UHV environment. The Ga2O3−x films were probed by x-ray photoelectron spectroscopy (XPS). Chemical states were identified and stoichiometry was estimated. Metallic layers were deposited by e-beam evaporation in UHV after XPS analysis as caps and for future work. Film morphology and structure were probed by cross-sectional high-resolution transmission electron microscopy. The films were found to have x⩽0.3 and a metal/oxide interface roughness
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title Deposition of Ga2O3−x ultrathin films on GaAs by e-beam evaporation
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