Gallium nitride: Method of defect characterization by wet oxidation in an oxalic acid electrolytic cell

A method is suggested to characterize the defect density of a given gallium nitride film, through anodic etching. We report that oxalic acid etches gallium nitride, at room temperature and pressure in an electrolytic cell. Etching is theorized to proceed by attacking those points where planar defect...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-07, Vol.20 (4), p.1339-1341
Main Authors: Sundararajan, Sri Priya, Crouse, David, Lo, Yu-Hwa
Format: Article
Language:English
Subjects:
Carboxylic acids
Crystal defects
Electric potential
Electrolysis
Electrolytic cells
Etching
Oxidation
Pressure
Surfaces
Temperature
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Summary:A method is suggested to characterize the defect density of a given gallium nitride film, through anodic etching. We report that oxalic acid etches gallium nitride, at room temperature and pressure in an electrolytic cell. Etching is theorized to proceed by attacking those points where planar defects and threading dislocations terminate on the GaN surface. The effect of varying electrolysis voltage on the etch pit density of the porous gallium nitride thus formed is investigated. Etch pit densities on the order of 4×10 10 pits/cm 2 were measured. The use of etch pit density to estimate defect density of a given GaN film is discussed.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1488644