Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal–oxide–semiconductor devices

We have characterized physical and electrical properties of the HfO2/HfSixOy thin film for gate oxides in the metal–oxide–semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the HfSixOy interfacial layer and the high-k HfO2 film simultaneously. Interestingly,...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2002-07, Vol.20 (4), p.1360-1363
Main Authors: Kang, Hyeoksu, Roh, Yonghan, Bae, Geunhag, Jung, Donggeun, Yang, Cheol-Woong
Format: Article
Language:English
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Summary:We have characterized physical and electrical properties of the HfO2/HfSixOy thin film for gate oxides in the metal–oxide–semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the HfSixOy interfacial layer and the high-k HfO2 film simultaneously. Interestingly, the postoxidation N2 annealing of the HfO2/HfSixOy thin film reduces (increases) the thickness of an amorphous HfSixOy layer (HfO2 layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties: The equivalent oxide thickness and the leakage current density of the Pd–HfO2/HfSixOy–Si capacitor were 1.4 nm and 5×10−3 A/cm2 at 2 V after compensating the flatband voltage of 1 V, respectively.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.1490383