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Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs
Silicon surfaces having native oxides were implanted with 3 keV Cs + ions and annealed. Implanted doses of 1, 1.7, and 3×10 16 Cs/cm 2 led to room-temperature work functions with stable, reproducible values of 2.3±0.15 eV after vacuum annealing at 100–560 °C. The resulting surfaces have been char...
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Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-11, Vol.20 (6), p.2049-2051 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Silicon surfaces having native oxides were implanted with 3 keV
Cs
+
ions and annealed. Implanted doses of 1, 1.7, and
3×10
16
Cs/cm
2
led to room-temperature work functions with stable, reproducible values of
2.3±0.15
eV
after vacuum annealing at 100–560 °C. The resulting surfaces have been characterized with regard to the amount of Cs retained, the thermal and environmental stability of the work function, and the composition and chemistry of the implanted layer. The surface layers consisted of a compound of Si–Cs–O, which is compositionally stable to temperatures of ∼400 °C in vacuum. In addition, we found that these surfaces are stable with regard to exposures to background gases and ambient air. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.1517259 |