Two-dimensional dopant profiling of ultrashallow junctions by electron holography

Electron holography using a transmission electron microscope equipped with a Moellenstedt biprism has emerged as a viable technique for creating two-dimensional voltage maps of semiconductor devices. We are presenting an introduction to this dopant profiling method. Practical details are given on sa...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-11, Vol.20 (6), p.3063-3066
Main Authors: Thesen, Alexander E., Frost, Bernhard G., Joy, David C.
Format: Article
Language:English
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Summary:Electron holography using a transmission electron microscope equipped with a Moellenstedt biprism has emerged as a viable technique for creating two-dimensional voltage maps of semiconductor devices. We are presenting an introduction to this dopant profiling method. Practical details are given on sample preparation, instrumentational considerations, and data interpretation.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1523022