Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2004-01, Vol.22 (1), p.175-179
• Main Authors: Suh, You-Seok, Heuss, Greg, Misra, Veena
• Format: Article
• Language: English
• ISSN: 1071-1023; 1520-8567
• DOI: 10.1116/1.1640398

Reactively sputtered TaSixNy films have been investigated as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. The as-deposited TaSixNy films were amorphous over a wide range of compositions. After annealing at 1000 °C, Ta30Si33N37 film became crystalline, however Ta26Si28N52 film remained amorphous. The x-ray photoelectron spectroscopy shows a significant increase of Si–N bonding in the TaSixNy films with increasing N content. The presence of Si–N bonds is attributed to cause the amorphous nature of the high N containing TaSixNy films. The work functions of TaSixNy films were extracted by capacitance–voltage analysis. The work function values for TaSixNy films with varying N contents range from 4.26 to 4.35 eV after forming gas annealing at 400 °C for 30 min, suggesting that TaSixNy films have work functions appropriate for n-type metal-oxide-semiconductor devices. However, it was observed, after 1000 °C anneals, that the work function of TaSixNy films increased to ∼4.8 eV. We believe that the mechanism that causes the work function to increase is the formation of a Ta-disilicide layer at the interface of the electrode and the dielectric. Current–voltage characteristics of the TaSixNy gates showed lower gate leakage compared to the TaSix gates, due to the retarding formation of an interface layer in the TaSixNy/SiO2/p-Si structures.