Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy

Lateral-carrier-transport characteristics in InAs/GaAs quantum-dot (QD) heterostructures has been studied in depth by photoluminescence spectroscopy. Anomalous temperature-dependent phenomena, including spectral width, emission energy, and quenching behaviors, were attributed to carrier-thermalizati...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 2004-05, Vol.22 (3), p.891-893
Main Authors: Lin, Ray-Ming, Cheng, Chao-Ching, Shen, Hui-Tang, Nee, Tzer-En
Format: Article
Language:English
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Summary:Lateral-carrier-transport characteristics in InAs/GaAs quantum-dot (QD) heterostructures has been studied in depth by photoluminescence spectroscopy. Anomalous temperature-dependent phenomena, including spectral width, emission energy, and quenching behaviors, were attributed to carrier-thermalization processes. Increased temperatures facilitated the photoexcited carriers to redistribute in the heterodot system. Carrier redistrubution led to not only the linewith shrinkages, but also the emission redshifts for the excited- and ground-state transitions in QD ensembles. Plan-view transmission electron microscopy also showed the growth-interruption effect on the dot formation. It was found that the longer interruption time improved the dot-size uniformity.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1701857