Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175 ...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2004-05, Vol.22 (3), p.1432-1435
Main Authors: Yoh, Kanji, Ohno, Hiroshi, Sueoka, Kazuhisa, Ramsteiner, Manfred E.
Format: Article
Language:English
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Summary:We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175 °C clearly suffer from increased reaction and out-diffusion of semiconductor constituents compared to those grown at 23 °C. The lower temperature samples showed an increased degree of spin polarization of 18%–20% which translates to 36%–40% of spin injection efficiency assuming selection rules between heavy and light holes in the p-type InAs substrate. It is close to the spin polarization of 40%–45% in an Fe spin injector itself.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1755711