Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si–H2 bonds in the films

A downstream-cluster-collection method of high sensitivity has been developed to obtain information on size distribution, density, shape, and structure of clusters formed in reactive plasmas. The method have been applied together with a cluster-suppressed plasma chemical vapor deposition method in o...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2004-07, Vol.22 (4), p.1536-1539
Main Authors: Koga, Kazunori, Kaguchi, Naoto, Shiratani, Masaharu, Watanabe, Yukio
Format: Article
Language:English
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Summary:A downstream-cluster-collection method of high sensitivity has been developed to obtain information on size distribution, density, shape, and structure of clusters formed in reactive plasmas. The method have been applied together with a cluster-suppressed plasma chemical vapor deposition method in order to study a correlation between a volume fraction Vf of clusters incorporated into a-Si:H films and a hydrogen content CH(SiH2) associated with Si–H2 bonds in the films. The CH(SiH2) value decreases almost linearly from 0.6 at. % to 0.05 at. % with decreasing Vf by about one order of magnitude. The result indicates that the incorporation of clusters, above about 1 nm in size, of amorphous structure into a-Si:H films is an important origin of Si–H2 bonds in the films.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1763905