Fabrication and characterization of 650nm resonant-cavity light-emitting diodes

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2004-09, Vol.22 (5), p.2518-2521
• Main Authors: Tsai, Chia-Lung, Ho, Chih-Wei, Huang, Chun-Yuan, Lee, Feng-Ming, Wu, Meng-Chyi, Wang, Hai-Lin, Ko, Sum-Chien, Ho, Wen-Jeng, Huang, Jet, Deng, J. R.
• Format: Article
• Language: English
• ISSN: 1071-1023; 1520-8567
• DOI: 10.1116/1.1800358

In this article, we report the fabrication and characterization of 650nm resonant-cavity light-emitting diodes (RCLEDs) with the GaInP∕AlGaInP multi-quantum-well active layer sandwiched between two AlGaAs∕AlAs distributed Bragg reflectors. We compare the performance of RCLEDs with different mesa diameters in the characteristics of forward voltage, light output power, external quantum efficiency, emission spectrum, and dynamic response. All the RCLEDs have a low forward voltage of 1.9–2.0V at 20mA. The RCLED with a window diameter of 120μm exhibits the maximum light output power of 0.79mW at 39mA, the best external quantum efficiency of 2.8% at 1.2mA, a peak wavelength of 647nm, and a full width at half-maximum of 14.5nm at 50mA. The RCLED with a 30μm diameter shows the maximum 3dB frequency bandwidth of 240MHz at a driving current of 40mA.