Imaging patterns of intensity in topographically directed photolithography

This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of em...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2005-05, Vol.23 (3), p.918-925
Main Authors: Paul, Kateri E., Breen, Tricia L., Hadzik, Tanja, Whitesides, George M., Smith, Stephen P., Prentiss, Mara
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of embossed, illuminated ( λ = 365 – 436 nm ) photoresist yields structures as small as 70 nm . Numerical solutions of the Fresnel integral are used to calculate the pattern of intensity of light in the photoresist layer. Numeric simulation of a nondiffusion-limited development process results in theoretical structures that correlate well with the structures generated experimentally.
ISSN:0734-211X
1071-1023
1520-8567
2327-9877
DOI:10.1116/1.1924415