Imaging patterns of intensity in topographically directed photolithography

This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of em...

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Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2005-05, Vol.23 (3), p.918-925
Main Authors: Paul, Kateri E., Breen, Tricia L., Hadzik, Tanja, Whitesides, George M., Smith, Stephen P., Prentiss, Mara
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Language:English
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creator Paul, Kateri E.
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description This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of embossed, illuminated ( λ = 365 – 436 nm ) photoresist yields structures as small as 70 nm . Numerical solutions of the Fresnel integral are used to calculate the pattern of intensity of light in the photoresist layer. Numeric simulation of a nondiffusion-limited development process results in theoretical structures that correlate well with the structures generated experimentally.
doi_str_mv 10.1116/1.1924415
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Imaging patterns of intensity in topographically directed photolithography
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