Effect of cerium concentration on the structural and ferroelectric properties of Bi4−xCexTi3O12 thin films for ferroelectric random access memories

The effect of cerium concentration on the structural and ferroelectric properties in Bi4−xCexTi3O12 (BCT) thin films grown using pulsed-laser deposition was studied. The BCT films with x=0.25 and 0.5 have a pure layered structure after annealing at 650°C in an oxygen ambient. On the other hand, film...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2005-05, Vol.23 (3), p.1029-1031
Main Authors: Oh, Young-Nam, Yoon, Soon-Gil
Format: Article
Language:English
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Summary:The effect of cerium concentration on the structural and ferroelectric properties in Bi4−xCexTi3O12 (BCT) thin films grown using pulsed-laser deposition was studied. The BCT films with x=0.25 and 0.5 have a pure layered structure after annealing at 650°C in an oxygen ambient. On the other hand, films with x=0.75 still contained a pyrochlore phase as well as a layered structure. The remanent polarization of BCT thin films decreased with increasing Ce concentration. The BCT films with x=0.25 and 0.5 exhibit no polarization fatigue after electric field cycling up to 6×1010 switching cycles. The leakage current densities of samples measured at 100kV∕cm decreased slightly with decreasing Ce concentration.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.1926288