Precise patterning of SiO2-based glass by low-temperature nanoimprint lithography assisted by UV irradiation on both faces using Glasia® as a precursor

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2007-07, Vol.25 (4), p.1393-1397
• Main Authors: Okinaka, Motoki, Tsushima, Hiroshi, Ichinose, Yoshifumi, Watanabe, Emi, Yanagisawa, Keiichi, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu
• Format: Article
• Language: eng ; jpn
• ISSN: 1071-1023; 1520-8567
• DOI: 10.1116/1.2759936

Precise patterning of glass has been achieved by low-temperature nanoimprint lithography using Glasia® as a precursor. The main constitute of the Glasia® is polysilane polymer. The polysilane with a simple structure enables the rapid patterning of line and space structures ranging from 50nmto25μm and air-hole structures with a high aspect ratio of 5 at temperatures lower than 80°C. UV irradiation on both faces transforms the polysilane into SiO2-based glass and improves the properties of glass through photo-oxidation. The patterned structure baked at 250°C shows no shrinkage. It is suggested that the incorporation of the oxygen into the patterned film during heat treatment minimizes the shrink due to the evaporation of organic side chains. The patterned SiO2-based glass material withstands ultrasonication in acetone, and has about twice the Vickers hardness of poly(methylmethacrylate) (PMMA).