Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy

The extreme ultraviolet lithography (EUVL) program at IMEC is aimed to tackle many unsolved critical issues of EUV lithography as the technology moves towards production, by focusing specifically on tool, resist, and mask projects. Here, the authors describe the structure of the IMEC EUVL program an...

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Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2007-11, Vol.25 (6), p.2127-2131
Main Authors: Lorusso, G. F., Goethals, A. M., Jonckheere, R., Hermans, J., Ronse, K., Myers, A. M., Kim, I., Niroomand, A., Iwamoto, F., Ritter, D.
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cited_by cdi_FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333
cites cdi_FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333
container_end_page 2131
container_issue 6
container_start_page 2127
container_title Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
container_volume 25
creator Lorusso, G. F.
Goethals, A. M.
Jonckheere, R.
Hermans, J.
Ronse, K.
Myers, A. M.
Kim, I.
Niroomand, A.
Iwamoto, F.
Ritter, D.
description The extreme ultraviolet lithography (EUVL) program at IMEC is aimed to tackle many unsolved critical issues of EUV lithography as the technology moves towards production, by focusing specifically on tool, resist, and mask projects. Here, the authors describe the structure of the IMEC EUVL program and the status of the EUV alpha demo tool. In particular, they discuss their proposed strategies for flare mitigation and shadowing effect correction. They demonstrate how it is possible to implement an effective rule-based flare mitigation strategy. In addition, they propose a relatively simple methodology to fully compensate for shadowing pattern placement error and critical dimension bias.
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fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_2781516</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_2781516Extreme_ultraviolet</sourcerecordid><originalsourceid>FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333</originalsourceid><addsrcrecordid>eNp9kFFLwzAUhYMoOKcP_oO8KnTmtk3aCT7ImDqY-KA-Srhrky7SNiWJ0_17qxsoyLwv53I553L4CDkFNgIAcQGjOMuBg9gjA-Axi3Iusv1-ZxlEwOLkkBx5_8oYEzxJBuRl-hGcahR9q4PDlbG1CrQ2YWkrh91yTTHQ2f10ckkfl1jad9NWtLBNp1qPwdiWYltSXaNTtDHBVJuj738FVa2PyYHG2quTrQ7J8830aXIXzR9uZ5PreVSkMA5RrFgsABQqYCrBQoDoRY1LLDDlKWMqF3GqM625QC3KpFxAKpALnetF0s-QnG3-Fs5675SWnTMNurUEJr-4SJBbLr33auP1hQnfdXebt3DkLzh9_nxXfmXdT1Z2pf7P_LfZJ7xAiH8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Lorusso, G. F. ; Goethals, A. M. ; Jonckheere, R. ; Hermans, J. ; Ronse, K. ; Myers, A. M. ; Kim, I. ; Niroomand, A. ; Iwamoto, F. ; Ritter, D.</creator><creatorcontrib>Lorusso, G. F. ; Goethals, A. M. ; Jonckheere, R. ; Hermans, J. ; Ronse, K. ; Myers, A. M. ; Kim, I. ; Niroomand, A. ; Iwamoto, F. ; Ritter, D.</creatorcontrib><description>The extreme ultraviolet lithography (EUVL) program at IMEC is aimed to tackle many unsolved critical issues of EUV lithography as the technology moves towards production, by focusing specifically on tool, resist, and mask projects. Here, the authors describe the structure of the IMEC EUVL program and the status of the EUV alpha demo tool. In particular, they discuss their proposed strategies for flare mitigation and shadowing effect correction. They demonstrate how it is possible to implement an effective rule-based flare mitigation strategy. In addition, they propose a relatively simple methodology to fully compensate for shadowing pattern placement error and critical dimension bias.</description><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.2781516</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><publisher>American Vacuum Society</publisher><ispartof>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-11, Vol.25 (6), p.2127-2131</ispartof><rights>American Vacuum Society</rights><rights>2007 American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333</citedby><cites>FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lorusso, G. F.</creatorcontrib><creatorcontrib>Goethals, A. M.</creatorcontrib><creatorcontrib>Jonckheere, R.</creatorcontrib><creatorcontrib>Hermans, J.</creatorcontrib><creatorcontrib>Ronse, K.</creatorcontrib><creatorcontrib>Myers, A. M.</creatorcontrib><creatorcontrib>Kim, I.</creatorcontrib><creatorcontrib>Niroomand, A.</creatorcontrib><creatorcontrib>Iwamoto, F.</creatorcontrib><creatorcontrib>Ritter, D.</creatorcontrib><title>Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy</title><title>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>The extreme ultraviolet lithography (EUVL) program at IMEC is aimed to tackle many unsolved critical issues of EUV lithography as the technology moves towards production, by focusing specifically on tool, resist, and mask projects. Here, the authors describe the structure of the IMEC EUVL program and the status of the EUV alpha demo tool. In particular, they discuss their proposed strategies for flare mitigation and shadowing effect correction. They demonstrate how it is possible to implement an effective rule-based flare mitigation strategy. In addition, they propose a relatively simple methodology to fully compensate for shadowing pattern placement error and critical dimension bias.</description><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kFFLwzAUhYMoOKcP_oO8KnTmtk3aCT7ImDqY-KA-Srhrky7SNiWJ0_17qxsoyLwv53I553L4CDkFNgIAcQGjOMuBg9gjA-Axi3Iusv1-ZxlEwOLkkBx5_8oYEzxJBuRl-hGcahR9q4PDlbG1CrQ2YWkrh91yTTHQ2f10ckkfl1jad9NWtLBNp1qPwdiWYltSXaNTtDHBVJuj738FVa2PyYHG2quTrQ7J8830aXIXzR9uZ5PreVSkMA5RrFgsABQqYCrBQoDoRY1LLDDlKWMqF3GqM625QC3KpFxAKpALnetF0s-QnG3-Fs5675SWnTMNurUEJr-4SJBbLr33auP1hQnfdXebt3DkLzh9_nxXfmXdT1Z2pf7P_LfZJ7xAiH8</recordid><startdate>20071101</startdate><enddate>20071101</enddate><creator>Lorusso, G. F.</creator><creator>Goethals, A. M.</creator><creator>Jonckheere, R.</creator><creator>Hermans, J.</creator><creator>Ronse, K.</creator><creator>Myers, A. M.</creator><creator>Kim, I.</creator><creator>Niroomand, A.</creator><creator>Iwamoto, F.</creator><creator>Ritter, D.</creator><general>American Vacuum Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20071101</creationdate><title>Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy</title><author>Lorusso, G. F. ; Goethals, A. M. ; Jonckheere, R. ; Hermans, J. ; Ronse, K. ; Myers, A. M. ; Kim, I. ; Niroomand, A. ; Iwamoto, F. ; Ritter, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lorusso, G. F.</creatorcontrib><creatorcontrib>Goethals, A. M.</creatorcontrib><creatorcontrib>Jonckheere, R.</creatorcontrib><creatorcontrib>Hermans, J.</creatorcontrib><creatorcontrib>Ronse, K.</creatorcontrib><creatorcontrib>Myers, A. M.</creatorcontrib><creatorcontrib>Kim, I.</creatorcontrib><creatorcontrib>Niroomand, A.</creatorcontrib><creatorcontrib>Iwamoto, F.</creatorcontrib><creatorcontrib>Ritter, D.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lorusso, G. F.</au><au>Goethals, A. M.</au><au>Jonckheere, R.</au><au>Hermans, J.</au><au>Ronse, K.</au><au>Myers, A. M.</au><au>Kim, I.</au><au>Niroomand, A.</au><au>Iwamoto, F.</au><au>Ritter, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy</atitle><jtitle>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2007-11-01</date><risdate>2007</risdate><volume>25</volume><issue>6</issue><spage>2127</spage><epage>2131</epage><pages>2127-2131</pages><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>The extreme ultraviolet lithography (EUVL) program at IMEC is aimed to tackle many unsolved critical issues of EUV lithography as the technology moves towards production, by focusing specifically on tool, resist, and mask projects. Here, the authors describe the structure of the IMEC EUVL program and the status of the EUV alpha demo tool. In particular, they discuss their proposed strategies for flare mitigation and shadowing effect correction. They demonstrate how it is possible to implement an effective rule-based flare mitigation strategy. In addition, they propose a relatively simple methodology to fully compensate for shadowing pattern placement error and critical dimension bias.</abstract><pub>American Vacuum Society</pub><doi>10.1116/1.2781516</doi><tpages>5</tpages></addata></record>
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ispartof Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-11, Vol.25 (6), p.2127-2131
issn 1071-1023
1520-8567
language eng
recordid cdi_crossref_primary_10_1116_1_2781516
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title Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T13%3A41%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Extreme%20ultraviolet%20lithography%20at%20IMEC:%20Shadowing%20compensation%20and%20flare%20mitigation%20strategy&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20B,%20Microelectronics%20and%20nanometer%20structures%20processing,%20measurement%20and%20phenomena&rft.au=Lorusso,%20G.%20F.&rft.date=2007-11-01&rft.volume=25&rft.issue=6&rft.spage=2127&rft.epage=2131&rft.pages=2127-2131&rft.issn=1071-1023&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.2781516&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_2781516Extreme_ultraviolet%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c419t-2e02611eae10e3ac616e3ae9daca45400e8624f7ff56af6d3db146a56f8fb3333%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true