Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2 GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

The electrical characteristics of Gd2O3-incorporated HfO2 multimetal dielectric n-type doped gallium arsenide (GaAs) metal-oxide semiconductor capacitors with different Gd2O3 and HfO2 thicknesses are investigated. A top Gd2O3 with bottom HfO2 bilayer dielectric shows excellent capacitance-voltage (C...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2008-03, Vol.26 (2), p.624-626
Main Authors: Park, Sung Il, Ok, Injo, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, Yum, Jung Hwan, Han, Zhao, Lee, Jack C.
Format: Article
Language:English
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Summary:The electrical characteristics of Gd2O3-incorporated HfO2 multimetal dielectric n-type doped gallium arsenide (GaAs) metal-oxide semiconductor capacitors with different Gd2O3 and HfO2 thicknesses are investigated. A top Gd2O3 with bottom HfO2 bilayer dielectric shows excellent capacitance-voltage (C-V) characteristics and the lowest hysteresis. Scaling down of this Gd2O3∕HfO2 dielectric results in substantial reduction in hysteresis compared to HfO2 without significant change in equivalent oxide thickness. A qualitative explanation of reduced hysteresis with an electric field model is presented.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.2890708