Evolution of epitaxial Ta2O5 and Ta2O films during thermal oxidation of epitaxial tantalum films on sapphire substrates

The evolution of the tantalum oxide structure during low pressure thermal oxidation of epitaxial Ta films on a sapphire substrate was investigated. Thin Ta films were deposited using magnetron sputtering on sapphire substrates at a temperature of 700°C. Thermal oxidation of these films in oxygen at...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.494-497
Main Authors: Gnanarajan, S., Lam, S. K. H.
Format: Article
Language:English
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Summary:The evolution of the tantalum oxide structure during low pressure thermal oxidation of epitaxial Ta films on a sapphire substrate was investigated. Thin Ta films were deposited using magnetron sputtering on sapphire substrates at a temperature of 700°C. Thermal oxidation of these films in oxygen at a pressure of 1.0Pa at a temperature of 700°C produced epitaxial Ta2O and Ta2O5 films as determined by x-ray diffraction techniques. The epitaxial Ta2O film had a cubic structure with a (101) plane oriented in the substrate plane. The epitaxial Ta2O5 films had a twinned orthorhombic structure with a (201) plane oriented in the substrate plane.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.2909971