Effects of Ga + milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

InGaAsP/InP quantum well ridge waveguide lasers were fabricated for the evaluation of Ga + focused ion beam milling of mirrors. Electrical and optical properties were investigated. A 7% increment in the threshold current, a 17% reduction in the external quantum efficiency, and a 15 nm blueshift in t...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-09, Vol.27 (5), p.L25-L27
Main Authors: Vallini, F., Figueira, D. S. L., Jarschel, P. F., Barea, L. A. M., Von Zuben, A. A. G., Frateschi, N. C.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InGaAsP/InP quantum well ridge waveguide lasers were fabricated for the evaluation of Ga + focused ion beam milling of mirrors. Electrical and optical properties were investigated. A 7% increment in the threshold current, a 17% reduction in the external quantum efficiency, and a 15 nm blueshift in the emission spectrum were observed after milling as compared to the as-cleaved facet result. Annealing in inert atmosphere partially reverts these effects, resulting in a 4% increment in the threshold current, an 11% reduction in the external efficiency, and a 13 nm blueshift with the as-cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current, indicating that optical damage is the main effect of the milling process.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.3207741