Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/b...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.2702-2706
Main Authors: Winston, D., Cord, B. M., Ming, B., Bell, D. C., DiNatale, W. F., Stern, L. A., Vladar, A. E., Postek, M. T., Mondol, M. K., Yang, J. K. W., Berggren, K. K.
Format: Article
Language:English
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Summary:A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub- 10 nm -half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.3250204