Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

The stability of the tetragonal phase of Ge doped HfO2 thin films on Si(100) was investigated. Hf(Ge)O2 films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigat...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.693-696
Main Authors: Miotti, Leonardo, Bastos, Karen P., Lucovsky, Gerald, Radtke, Cláudio, Nordlund, Dennis
Format: Article
Language:English
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Summary:The stability of the tetragonal phase of Ge doped HfO2 thin films on Si(100) was investigated. Hf(Ge)O2 films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O2 on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 °C.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.3430562