Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

The authors used x-ray absorption spectroscopy of the O K edge to investigate the nanocrystalline structure of thin HfO2 films deposited by remote plasma enhanced chemical vapor deposition on Ge(100). Postdeposition thermal process induced the interfacial reconstruction and the crystallization of th...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.662-664
Main Authors: Bastos, Karen Paz, Miotti, Leonardo, Lucovsky, Gerald, Chung, Kwun-Bum, Nordlund, Dennis
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors used x-ray absorption spectroscopy of the O K edge to investigate the nanocrystalline structure of thin HfO2 films deposited by remote plasma enhanced chemical vapor deposition on Ge(100). Postdeposition thermal process induced the interfacial reconstruction and the crystallization of the HfO2 in the monoclinic structure driven by the Ge(100) substrate. The substrate templating of the HfO2 crystallization is an evidence that the processing used here removes the undesired the interfacial layer and has the potential to yield interfaces with low density of defects.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.3430563