Trapping in GdSiO high- k films

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.01A902-01A902-4
• Main Authors: Rao, R., Simoncini, R., Gottlob, H. D. B., Schmidt, M., Irrera, F.
• Format: Article
• Language: English
• ISSN: 1071-1023; 2166-2746; 1520-8567; 2166-2754
• DOI: 10.1116/1.3521385

In this article, the authors systematically characterized TiN / GdSiO / SiO 2 / Si metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage ( C - V ) technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at 100 – 200   μ s . This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high- k film. This study was possible only because of the pulsed C - V technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications.