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Trapping in GdSiO high- k films
In this article, the authors systematically characterized TiN / GdSiO / SiO 2 / Si metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage ( C - V ) technique, in condition of...
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| Published in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.01A902-01A902-4 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c424t-63a478270395357f114a4e375a4395cbed62a4852efde6a7e7ffcaa68c93e00e3 |
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| cites | cdi_FETCH-LOGICAL-c424t-63a478270395357f114a4e375a4395cbed62a4852efde6a7e7ffcaa68c93e00e3 |
| container_end_page | 01A902-4 |
| container_issue | 1 |
| container_start_page | 01A902 |
| container_title | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena |
| container_volume | 29 |
| creator | Rao, R. Simoncini, R. Gottlob, H. D. B. Schmidt, M. Irrera, F. |
| description | In this article, the authors systematically characterized
TiN
/
GdSiO
/
SiO
2
/
Si
metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage
(
C
-
V
)
technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at
100
–
200
μ
s
. This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high-
k
film. This study was possible only because of the pulsed
C
-
V
technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications. |
| doi_str_mv | 10.1116/1.3521385 |
| format | article |
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TiN
/
GdSiO
/
SiO
2
/
Si
metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage
(
C
-
V
)
technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at
100
–
200
μ
s
. This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high-
k
film. This study was possible only because of the pulsed
C
-
V
technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications.</description><identifier>ISSN: 1071-1023</identifier><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.3521385</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><publisher>American Vacuum Society</publisher><ispartof>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.01A902-01A902-4</ispartof><rights>American Vacuum Society</rights><rights>2011 American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-63a478270395357f114a4e375a4395cbed62a4852efde6a7e7ffcaa68c93e00e3</citedby><cites>FETCH-LOGICAL-c424t-63a478270395357f114a4e375a4395cbed62a4852efde6a7e7ffcaa68c93e00e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Rao, R.</creatorcontrib><creatorcontrib>Simoncini, R.</creatorcontrib><creatorcontrib>Gottlob, H. D. B.</creatorcontrib><creatorcontrib>Schmidt, M.</creatorcontrib><creatorcontrib>Irrera, F.</creatorcontrib><title>Trapping in GdSiO high- k films</title><title>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>In this article, the authors systematically characterized
TiN
/
GdSiO
/
SiO
2
/
Si
metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage
(
C
-
V
)
technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at
100
–
200
μ
s
. This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high-
k
film. This study was possible only because of the pulsed
C
-
V
technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications.</description><issn>1071-1023</issn><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9j01LAzEQhoMoWKsHf4F7VUjNZPKxvQhStAqFHqznELNJN9pul2QR_PeutuJB6mmG4Xlf5iHkHNgIANQ1jFBywFIekAFIzmgplT7sd6aBAuN4TE5yfmWMKYk4IBeLZNs2NssiNsW0eorzoo7LmhZvRYirdT4lR8Gusj_bzSF5vr9bTB7obD59nNzOqBNcdFShFbrkmuFYotQBQFjhUUsr-ot78ZXiVpSS-1B5ZbXXIThrVenG6BnzOCSX216XNjknH0yb4tqmDwPMfJkZMDuznr3ZstnFznZx0-yHf_RMbMy3nqljX3C1r-B9k37Dpq3Cf_Df1z4B7nhvCw</recordid><startdate>20110101</startdate><enddate>20110101</enddate><creator>Rao, R.</creator><creator>Simoncini, R.</creator><creator>Gottlob, H. D. B.</creator><creator>Schmidt, M.</creator><creator>Irrera, F.</creator><general>American Vacuum Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110101</creationdate><title>Trapping in GdSiO high- k films</title><author>Rao, R. ; Simoncini, R. ; Gottlob, H. D. B. ; Schmidt, M. ; Irrera, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-63a478270395357f114a4e375a4395cbed62a4852efde6a7e7ffcaa68c93e00e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rao, R.</creatorcontrib><creatorcontrib>Simoncini, R.</creatorcontrib><creatorcontrib>Gottlob, H. D. B.</creatorcontrib><creatorcontrib>Schmidt, M.</creatorcontrib><creatorcontrib>Irrera, F.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rao, R.</au><au>Simoncini, R.</au><au>Gottlob, H. D. B.</au><au>Schmidt, M.</au><au>Irrera, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trapping in GdSiO high- k films</atitle><jtitle>Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2011-01-01</date><risdate>2011</risdate><volume>29</volume><issue>1</issue><spage>01A902</spage><epage>01A902-4</epage><pages>01A902-01A902-4</pages><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>In this article, the authors systematically characterized
TiN
/
GdSiO
/
SiO
2
/
Si
metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage
(
C
-
V
)
technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at
100
–
200
μ
s
. This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high-
k
film. This study was possible only because of the pulsed
C
-
V
technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications.</abstract><pub>American Vacuum Society</pub><doi>10.1116/1.3521385</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.01A902-01A902-4 |
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| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Trapping in GdSiO high- k films |
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