Poly-Si/TiN/Mo/HfO2 gate stack etching in high-density plasmas

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Bibliographic Details
Published in:Journal of vacuum science & technology 2011-01, Vol.29 (1), p.11024-1 à 9
Main Authors: Luere, O., Pargon, E., Vallier, L., Joubert, O.
Format: Article
Language:English
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ISSN:2166-2746
0022-5355
2166-2754
DOI:10.1116/1.3533939