Effect of growth temperature on a-plane ZnO formation on r-plane sapphire

The effect of growth temperature on a-plane ZnO formation on r-plane sapphire has been systematically investigated by employing in situ high pressure reflection high-energy electron diffraction, atomic force microscopy, and high-resolution x-ray diffraction. For film growth above and below 600   ° C...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2011-05, Vol.29 (3), p.03A110-03A110-4
Main Authors: Peng, Chun-Yen, Tian, Jr-Sheng, Wang, Wei-Lin, Ho, Yen-Teng, Chuang, Shu-Chang, Chu, Ying-Hao, Chang, Li
Format: Article
Language:English
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Summary:The effect of growth temperature on a-plane ZnO formation on r-plane sapphire has been systematically investigated by employing in situ high pressure reflection high-energy electron diffraction, atomic force microscopy, and high-resolution x-ray diffraction. For film growth above and below 600   ° C , it is shown that there is a significant difference in growth rate and surface morphology due to the differences in the growth mode. Stripelike morphologies were observed on the surface of a-plane ZnO grown at low temperature (LT) because of differences in the growth rate along the c-axis and the growth rate normal to the c-axis. Furthermore, annealing of films grown at low temperature results in more pronounced stripe morphology and in improvement of crystallinity.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.3549141