Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-05, Vol.29 (3)
• Main Authors: Zhang, Xingui, Guo, Huaxin, Lin, Hau-Yu, Cheng, Chao-Ching, Ko, Chih-Hsin, Wann, Clement H., Luo, Guang-Li, Chang, Chun-Yen, Chien, Chao-Hsin, Han, Zong-You, Huang, Shih-Chiang, Chin, Hock-Chun, Gong, Xiao, Koh, Shao-Ming, Lim, Phyllis Shi Ya, Yeo, Yee-Chia
• Format: Article
• Language: English
• ISSN: 1071-1023; 2166-2746; 1520-8567; 2166-2754
• DOI: 10.1116/1.3592211

The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n + doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity ( ρ c ) of 1.57   Ω   mm and sheet resistance ( R sh ) of 2.8   Ω / ◻ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.