Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates

The authors have investigated the effect of 500 °C annealing for 60 s in N2 on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on n-type Ge substrates. X-ray photoelectron spectroscopy analyses reveal that the SiO2 interlayer can effectively suppress Ge outdiffusion during Hf...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2012-01, Vol.30 (1)
Main Authors: Li, Xue-Fei, Liu, Xiao-Jie, Fu, Ying-Ying, Li, Ai-Dong, Zhang, Wen-Qi, Li, Hui, Wu, Di
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893
cites cdi_FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893
container_end_page
container_issue 1
container_start_page
container_title Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
container_volume 30
creator Li, Xue-Fei
Liu, Xiao-Jie
Fu, Ying-Ying
Li, Ai-Dong
Zhang, Wen-Qi
Li, Hui
Wu, Di
description The authors have investigated the effect of 500 °C annealing for 60 s in N2 on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on n-type Ge substrates. X-ray photoelectron spectroscopy analyses reveal that the SiO2 interlayer can effectively suppress Ge outdiffusion during HfO2 growth and subsequent postdeposition annealing process. The electrical measurement shows that capacitance equivalent thickness of 1.75 nm and a leakage current density of 3.9 × 10−3 A/cm2 at gate bias of flatband voltage (V fb) + 1 V was obtained for the annealed sample. The conduction band offsets at the HfO2/SiO2/Ge with and without annealing are found to be 2.22 and 2.07 eV, respectively.
doi_str_mv 10.1116/1.3665416
format article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_3665416</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_3665416</sourcerecordid><originalsourceid>FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893</originalsourceid><addsrcrecordid>eNqdkE1LAzEQhoMoWKsH_0GuCtvmY5PsHqXUVijsQT0vs9mkRttsSaLgvzdLC717ma_3mRdmELqnZEYplXM641KKksoLNKGCkaISUl3mmihaUML4NbqJ8ZMQIgXnEzQsrTU64cFi8N7AzvktHjx2PplgQTvYZaHH3RiyuvV74xPWHxBAZ8TF5HQc19e2YfNX1zC8hWRwTKC_4mi1ys13F1PI43iLrizsork75Sl6f16-LdbFplm9LJ42hWZ1nQqjayGZoKRTEmwJpeJWqo6psrLaVBU10HECRCvei0qwuidc53NZXyvDq5pP0cPRV4chxmBsewhuD-G3paQdP9XS9vSpzD4e2ahdguQG_z_4ZwhnsD30lv8B6cV3HQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Li, Xue-Fei ; Liu, Xiao-Jie ; Fu, Ying-Ying ; Li, Ai-Dong ; Zhang, Wen-Qi ; Li, Hui ; Wu, Di</creator><creatorcontrib>Li, Xue-Fei ; Liu, Xiao-Jie ; Fu, Ying-Ying ; Li, Ai-Dong ; Zhang, Wen-Qi ; Li, Hui ; Wu, Di</creatorcontrib><description>The authors have investigated the effect of 500 °C annealing for 60 s in N2 on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on n-type Ge substrates. X-ray photoelectron spectroscopy analyses reveal that the SiO2 interlayer can effectively suppress Ge outdiffusion during HfO2 growth and subsequent postdeposition annealing process. The electrical measurement shows that capacitance equivalent thickness of 1.75 nm and a leakage current density of 3.9 × 10−3 A/cm2 at gate bias of flatband voltage (V fb) + 1 V was obtained for the annealed sample. The conduction band offsets at the HfO2/SiO2/Ge with and without annealing are found to be 2.22 and 2.07 eV, respectively.</description><identifier>ISSN: 1071-1023</identifier><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.3665416</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2012-01, Vol.30 (1)</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893</citedby><cites>FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27900,27901</link.rule.ids></links><search><creatorcontrib>Li, Xue-Fei</creatorcontrib><creatorcontrib>Liu, Xiao-Jie</creatorcontrib><creatorcontrib>Fu, Ying-Ying</creatorcontrib><creatorcontrib>Li, Ai-Dong</creatorcontrib><creatorcontrib>Zhang, Wen-Qi</creatorcontrib><creatorcontrib>Li, Hui</creatorcontrib><creatorcontrib>Wu, Di</creatorcontrib><title>Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates</title><title>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>The authors have investigated the effect of 500 °C annealing for 60 s in N2 on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on n-type Ge substrates. X-ray photoelectron spectroscopy analyses reveal that the SiO2 interlayer can effectively suppress Ge outdiffusion during HfO2 growth and subsequent postdeposition annealing process. The electrical measurement shows that capacitance equivalent thickness of 1.75 nm and a leakage current density of 3.9 × 10−3 A/cm2 at gate bias of flatband voltage (V fb) + 1 V was obtained for the annealed sample. The conduction band offsets at the HfO2/SiO2/Ge with and without annealing are found to be 2.22 and 2.07 eV, respectively.</description><issn>1071-1023</issn><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqdkE1LAzEQhoMoWKsH_0GuCtvmY5PsHqXUVijsQT0vs9mkRttsSaLgvzdLC717ma_3mRdmELqnZEYplXM641KKksoLNKGCkaISUl3mmihaUML4NbqJ8ZMQIgXnEzQsrTU64cFi8N7AzvktHjx2PplgQTvYZaHH3RiyuvV74xPWHxBAZ8TF5HQc19e2YfNX1zC8hWRwTKC_4mi1ys13F1PI43iLrizsork75Sl6f16-LdbFplm9LJ42hWZ1nQqjayGZoKRTEmwJpeJWqo6psrLaVBU10HECRCvei0qwuidc53NZXyvDq5pP0cPRV4chxmBsewhuD-G3paQdP9XS9vSpzD4e2ahdguQG_z_4ZwhnsD30lv8B6cV3HQ</recordid><startdate>201201</startdate><enddate>201201</enddate><creator>Li, Xue-Fei</creator><creator>Liu, Xiao-Jie</creator><creator>Fu, Ying-Ying</creator><creator>Li, Ai-Dong</creator><creator>Zhang, Wen-Qi</creator><creator>Li, Hui</creator><creator>Wu, Di</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201201</creationdate><title>Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates</title><author>Li, Xue-Fei ; Liu, Xiao-Jie ; Fu, Ying-Ying ; Li, Ai-Dong ; Zhang, Wen-Qi ; Li, Hui ; Wu, Di</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Xue-Fei</creatorcontrib><creatorcontrib>Liu, Xiao-Jie</creatorcontrib><creatorcontrib>Fu, Ying-Ying</creatorcontrib><creatorcontrib>Li, Ai-Dong</creatorcontrib><creatorcontrib>Zhang, Wen-Qi</creatorcontrib><creatorcontrib>Li, Hui</creatorcontrib><creatorcontrib>Wu, Di</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Xue-Fei</au><au>Liu, Xiao-Jie</au><au>Fu, Ying-Ying</au><au>Li, Ai-Dong</au><au>Zhang, Wen-Qi</au><au>Li, Hui</au><au>Wu, Di</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates</atitle><jtitle>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2012-01</date><risdate>2012</risdate><volume>30</volume><issue>1</issue><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>The authors have investigated the effect of 500 °C annealing for 60 s in N2 on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on n-type Ge substrates. X-ray photoelectron spectroscopy analyses reveal that the SiO2 interlayer can effectively suppress Ge outdiffusion during HfO2 growth and subsequent postdeposition annealing process. The electrical measurement shows that capacitance equivalent thickness of 1.75 nm and a leakage current density of 3.9 × 10−3 A/cm2 at gate bias of flatband voltage (V fb) + 1 V was obtained for the annealed sample. The conduction band offsets at the HfO2/SiO2/Ge with and without annealing are found to be 2.22 and 2.07 eV, respectively.</abstract><doi>10.1116/1.3665416</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1071-1023
ispartof Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2012-01, Vol.30 (1)
issn 1071-1023
2166-2746
1520-8567
2166-2754
language eng
recordid cdi_crossref_primary_10_1116_1_3665416
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-25T09%3A17%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20annealing%20on%20interfacial%20and%20band%20alignment%20characteristics%20of%20HfO2/SiO2%20gate%20stacks%20on%20Ge%20substrates&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20B,%20Microelectronics%20and%20nanometer%20structures%20processing,%20measurement%20and%20phenomena&rft.au=Li,%20Xue-Fei&rft.date=2012-01&rft.volume=30&rft.issue=1&rft.issn=1071-1023&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.3665416&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_3665416%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c299t-ec9562510b76af4a473f67b2748fce881eab30a0c73d58529d03c5202d97e3893%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true