RHEED transients during InAs quantum dot growth by MBE

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2012-03, Vol.30 (2), p.02B128-02B128-4
• Main Authors: Shimomura, K., Shirasaka, T., Tex, D. M., Yamada, F., Kamiya, I.
• Format: Article
• Language: English
• ISSN: 1071-1023; 2166-2746; 1520-8567; 2166-2754
• DOI: 10.1116/1.3694019

The growth mechanisms of InAs self-assembled quantum dots (QDs) on GaAs(001) by molecular beam epitaxy are studied by reflection high-energy electron diffraction (RHEED) transients along the two major axes, [ 110 ] and [ 1 1 ¯ 0 ] . The authors observe anisotropy in the intensity transients and that there are two stages in QD formation, which emerge as different slopes in the RHEED transients. The authors attribute the anisotropy of the RHEED transients to the shape of QDs based on analysis using atomic force microscopy. The difference in the QD formation processes at each slope is investigated together with photoluminescence measurements. The authors observe that the QD density increases during the first slope whereas the QD density remains constant and the QD size increases during the second slope.