Bilayer graphene by bonding CVD graphene to epitaxial graphene

A novel method for creating bilayer graphene is described where single-layer CVD graphene grown on Cu is bonded to single-layer epitaxial graphene grown on Si-face SiC. Raman microscopy and x ray photoelectron spectroscopy demonstrate the uniqueness of this bilayer, as compared to a naturally formed...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2012-05, Vol.30 (3), p.03D110-03D110-5
Main Authors: Jernigan, Glenn G., Anderson, Travis J., Robinson, Jeremy T., Caldwell, Joshua D., Culbertson, Jim C., Myers-Ward, Rachael, Davidson, Anthony L., Ancona, Mario G., Wheeler, Virginia D., Nyakiti, Luke O., Friedman, Adam L., Campbell, Paul M., Kurt Gaskill, D.
Format: Article
Language:English
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Summary:A novel method for creating bilayer graphene is described where single-layer CVD graphene grown on Cu is bonded to single-layer epitaxial graphene grown on Si-face SiC. Raman microscopy and x ray photoelectron spectroscopy demonstrate the uniqueness of this bilayer, as compared to a naturally formed bilayer, in that a Bernal stack is not formed with each layer being strained differently yet being closely coupled. Electrical characterization of Hall devices fabricated on the unusual bilayer show higher mobilities, and lower carrier concentrations, than the individual CVD graphene or epitaxial graphene layers.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.3701700