Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates

The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane condu...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2013-01, Vol.31 (1)
Main Authors: Sik Son, Kyung, Bae, Kiho, Woo Kim, Jun, Suk Ha, Jeong, Hyung Shim, Joon
Format: Article
Language:English
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Summary:The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4755921