Bipolar resistive switching in an amorphous zinc tin oxide memristive device

The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching r...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-01, Vol.31 (1)
Main Authors: Rajachidambaram, Jaana S., Murali, Santosh, Conley, John F., Golledge, Stephen L., Herman, Gregory S.
Format: Article
Language:English
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Summary:The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >104 and long retention times of >104 s. Electrical characterization of the devices suggests that both filamentary and interfacial mechanisms are important for device switching. The authors have used secondary ion mass spectrometry to characterize the devices and found that significant interfacial reactions occur at the Al/ZTO interface.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4767124