Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

• Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-03, Vol.31 (2)
• Main Authors: Liu, Lu, Lo, Chien-Fong, Xi, Yuyin, Wang, Yuxi, Ren, Fan, Pearton, Stephen J., Kim, Hong-Yeol, Kim, Jihyun, Fitch, Robert C., Walker, Dennis E., Chabak, Kelson D., Gillespie, James K., Tetlak, Stephen E., Via, Glen D., Crespo, Antonio, Kravchenko, Ivan I.
• Format: Article
• Language: English
• ISSN: 2166-2746; 1520-8567; 2166-2754
• DOI: 10.1116/1.4788904

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 5 × 1015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5 MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121–336 cm−1 over the range of proton energies employed in this study.