Variation in the threshold voltage of amorphous-In 2 Ga 2 ZnO 7 thin-film transistors by ultrathin Al 2 O 3 passivation layer

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2013-11, Vol.31 (6), p.61205
Main Authors: Ho Rha, Sang, Ki Kim, Un, Jung, Jisim, Suk Hwang, Eun, Jun Lee, Seung, Jeon, Woojin, Woo Yoo, Yeon, Choi, Jung-Hae, Seong Hwang, Cheol
Format: Article
Language:English
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ISSN:2166-2746
2166-2754
DOI:10.1116/1.4827276