Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching

The authors demonstrate high quality factor GaAs-based L9 photonic crystal microcavities (PCMs) with embedded InAsSb quantum dots with emission in 1.3 μm at room temperature. The fabrication process uses reactive ion beam etching with a CHF3/N2 gas mixture and reactive ion etching with a BCl3/N2 gas...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014-01, Vol.32 (1)
Main Authors: González, Iván Prieto, Muñoz Camuñez, Luis Enrique, Taboada, Alfonso González, Robles Urdiales, Carmen, Ripalda Cobián, Jose María, Postigo Resa, Pablo Aitor
Format: Article
Language:English
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Summary:The authors demonstrate high quality factor GaAs-based L9 photonic crystal microcavities (PCMs) with embedded InAsSb quantum dots with emission in 1.3 μm at room temperature. The fabrication process uses reactive ion beam etching with a CHF3/N2 gas mixture and reactive ion etching with a BCl3/N2 gas mixture to form PCMs on air-suspended slabs. An optimum N2 partial flux content of 0.65 and a successful removal of deposits formed during the membrane release by a fast wet etching in HF provide optical quality factors (Q-factors) as high as ∼30 000.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4836517