Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the elec...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2014-01, Vol.32 (1)
Main Authors: Pointet, John, Gonon, Patrice, Latu-Romain, Lawrence, Bsiesy, Ahmad, Vallée, Christophe
Format: Article
Language:English
Subjects:
Condensed Matter
Engineering Sciences
Materials Science
Micro and nanotechnologies
Microelectronics
Physics
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Summary:In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4843515