Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications

Beryllium oxide (BeO) is a wide band gap alkaline earth oxide material that has recently shown significant promise as a high-k dielectric material in Si and III-V metal–oxide–semiconductor field effect transistor devices. However, many of the basic material properties for BeO thin films utilized in...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014-05, Vol.32 (3)
Main Authors: Koh, Donghyi, Yum, Jung-Hwan, Banerjee, Sanjay K., Hudnall, Todd W., Bielawski, Christopher, Lanford, William A., French, Benjamin L., French, Marc, Henry, Patrick, Li, Han, Kuhn, Markus, King, Sean W.
Format: Article
Language:English
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Summary:Beryllium oxide (BeO) is a wide band gap alkaline earth oxide material that has recently shown significant promise as a high-k dielectric material in Si and III-V metal–oxide–semiconductor field effect transistor devices. However, many of the basic material properties for BeO thin films utilized in these devices have not been reported or remain in question. In this regard, the authors report an investigation of the chemical, physical, electrical, and mechanical properties of BeO thin films formed via atomic layer deposition (ALD). Combined Rutherford backscattering and nuclear reaction analysis measurements show that ALD BeO thin films exhibit a low hydrogen content (
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4867436