Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allow...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2014-07, Vol.32 (4)
Main Authors: Dargis, Rytis, Clark, Andrew, Erdem Arkun, Fevzi, Grinys, Tomas, Tomasiunas, Rolandas, O'Hara, Andy, Demkov, Alexander A.
Format: Article
Language:English
Subjects:
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
GADOLINIUM OXIDES
GALLIUM NITRIDES
GERMANIUM
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
RARE EARTHS
SEMICONDUCTOR MATERIALS
SILICON
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4882173