Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates

A low threshold optical power density of 240 kW/cm2 is achieved for room temperature stimulated emission at 276 nm in AlGaN/AlGaN multiple quantum well (MQW) structures over AlN/sapphire templates. The heterostructures were grown by low-pressure metalorganic chemical vapor deposition whereas a pulse...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2014-11, Vol.32 (6)
Main Authors: Asif, Fatima, Lachab, Mohamed, Coleman, Antwon, Ahmad, Iftikhar, Zhang, Bin, Adivarahan, Vinod, Khan, Asif
Format: Article
Language:English
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Summary:A low threshold optical power density of 240 kW/cm2 is achieved for room temperature stimulated emission at 276 nm in AlGaN/AlGaN multiple quantum well (MQW) structures over AlN/sapphire templates. The heterostructures were grown by low-pressure metalorganic chemical vapor deposition whereas a pulsed ArF excimer laser (λexc = 193 nm) was used as the pumping source for photoluminescence measurements in edge configuration. The light emitted from the MQWs above threshold exhibits a minimum linewidth of 1.2 nm and is dominated by transverse electric polarization above threshold. The optical confinement factor in the active region was calculated to be about 2%.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4898694