Improved surge protection of flip-chip gallium nitride-based HEMTs by metal-semiconductor-metal two-dimensional electron gas varactor

In this paper, the authors report on the development of aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) with improved surge protection characteristics provided by a metal-semiconductor-metal two-dimensional electron gas (MSM-2DEG) varactor connected in...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-03, Vol.33 (2)
Main Authors: Tien, Chu-Yeh, Kuei, Ping-Yu, Chang, Liann-Be
Format: Article
Language:English
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Summary:In this paper, the authors report on the development of aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) with improved surge protection characteristics provided by a metal-semiconductor-metal two-dimensional electron gas (MSM-2DEG) varactor connected in series to the gate of each HEMT. Under an electrostatic discharge surge stress of 1100 V or less, HEMTs that incorporate this protection feature do not exhibit any changes because the surge stress is directly blocked by the MSM-2DEG varactor. In addition, flip-chip (FC) technology is also used to further improve the thermal performance and reliability of the HEMTs. The heat generated in the 2DEG channel of the HEMT flows directly through the interconnect metal to the submount, and hence, it improves thermal conduction. The results of experiments conducted show that the proposed FC HEMT with MSM-2DEG varactor has significantly improved surge protection characteristics.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4914949