Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride- co -trifluoroethylene) fabricated on elastomer substrate

• Published in: Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-09, Vol.33 (5)
• Main Authors: Jung, Soon-Won, Koo, Jae Bon, Park, Chan Woo, Oh, Ji-Young, Lee, Sang Seok, Koo, Kyung-Wan
• Format: Article
• Language: English
• ISSN: 2166-2746; 2166-2754
• DOI: 10.1116/1.4927367

The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21 cm2V−1s−1, 107, and 0.5–1 V/decade, respectively. The memory window of 13 V at ±20 V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10 mm. The memory on/off ratio was initially 5 × 104 and maintained at 102 even after a lapse of 3600 s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices.