Improved resistive switching properties in SiO x -based resistive random-access memory cell with Ti buffer layer

In this work, low-power bipolar resistive switching is demonstrated in a fully complementary metal–oxide–semiconductor-compatible Ni/Ti/SiO x /p +-Si resistive random-access memory (RRAM) device. The proposed device shows higher nonlinearity in the low-resistance state (LRS), lower reset current (...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2016-03, Vol.34 (2)
Main Authors: Kim, Sungjun, Cho, Seongjae, Park, Byung-Gook
Format: Article
Language:English
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Summary:In this work, low-power bipolar resistive switching is demonstrated in a fully complementary metal–oxide–semiconductor-compatible Ni/Ti/SiO x /p +-Si resistive random-access memory (RRAM) device. The proposed device shows higher nonlinearity in the low-resistance state (LRS), lower reset current (
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4943560