AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between −2.5 and +5.5 V. The device laye...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-03, Vol.35 (2)
Main Authors: Storm, David F., Growden, Tyler A., Zhang, Weidong, Brown, Elliott R., Nepal, Neeraj, Katzer, D. Scott, Hardy, Matthew T., Berger, Paul R., Meyer, David J.
Format: Article
Language:English
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Summary:The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between −2.5 and +5.5 V. The device layers were grown on freestanding, Ga-polar GaN substrates grown by hydride vapor phase epitaxy and having a density of threading dislocations between 106 and 107 cm−2. The authors speculate that the repeatable NDR is facilitated by the low-dislocation density substrates.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4977779