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In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces

In situ electrical characterization is used to study the interface properties and the contact penetration during reactions at metal/semiconductor interfaces. Ni contacts were formed in situ by deposition through a removable molybdenum shadow mask on molecular beam epitaxy-grown n-type GaAs(100) c(4×...

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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 1999-07, Vol.17 (4), p.1307-1312
Main Authors: Chen, L. C., Caldwell, D. A., Finstad, T. G., Palmstro/m, C. J.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c293t-8decd130cc3126c8a7b0a2d5a268641762dd2b0ac6713006048c8a4a041d3e373
cites cdi_FETCH-LOGICAL-c293t-8decd130cc3126c8a7b0a2d5a268641762dd2b0ac6713006048c8a4a041d3e373
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container_title Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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creator Chen, L. C.
Caldwell, D. A.
Finstad, T. G.
Palmstro/m, C. J.
description In situ electrical characterization is used to study the interface properties and the contact penetration during reactions at metal/semiconductor interfaces. Ni contacts were formed in situ by deposition through a removable molybdenum shadow mask on molecular beam epitaxy-grown n-type GaAs(100) c(4×4) As-rich surfaces. Annealing at 300 °C resulted in Ni x GaAs  (x≈3) formation. Subsequent exposure of the Ni x GaAs to an As 4 flux at 350 °C resulted in the formation of NiAs at the surface and the epitaxial regrowth of GaAs at the Ni 3 GaAs/GaAs interface. The Schottky barrier height (φ bn =0.68 V, as deposited) increased with Ni x GaAs formation (φ bn =0.87 V) and decreased slightly with subsequent As 4 exposure (φ bn =0.85 V). A thin buried n + marker layer was used to determine changes in the metal/semiconductor interface position from in situ capacitance–voltage measurements. The marker-layer movement demonstrated consumption and subsequent regrowth of GaAs beneath the contact. The ideality factor obtained from current–voltage measurements for the contacts on regrown GaAs was ⩽1.11, which is indicative of the high electrical quality of the regrown GaAs.
doi_str_mv 10.1116/1.581910
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title In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces
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