Ex situ growth of the c -axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates

SrBi 2 Ta 2 O 9 (SBT) thin films were deposited on (111) oriented Pt bottom electrodes using the rf magnetron sputtering method and then postannealed at 650–800 °C for 30 min in different oxygen atmospheres. The effect of Bi content on the c-axis preferred oriented growth was confirmed by the contro...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2957-2961
Main Authors: Bae, Choelhwyi, Lee, Jeon-Kook, Lee, Si-Hyung, Jung, Hyung-Jin
Format: Article
Language:English
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Summary:SrBi 2 Ta 2 O 9 (SBT) thin films were deposited on (111) oriented Pt bottom electrodes using the rf magnetron sputtering method and then postannealed at 650–800 °C for 30 min in different oxygen atmospheres. The effect of Bi content on the c-axis preferred oriented growth was confirmed by the control of the Bi2O3 loss during the postannealing. With increasing Bi content in SBT thin films, the degree of the c-axis preferred orientation was enhanced. In addition, a bimodal grain size distribution due to the Sr deficiency in the SBT film was observed. It is suggested that the c-axis preferred oriented growth on Pt(111) bottom electrodes can be attributed to growth controlled by surface energy minimization.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.581967