Growth of ultrathin Co/Cu/Si(110) films

We report the results of a study of the structural properties of Co films deposited on Cu/H–Si(110). A Cu(111) buffer layer is formed by evaporation or ultrahigh vacuum sputter deposition on the H-terminated Si(110) surface. From consideration of bulk lattice constants, the Cu films undergo a 6% exp...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 2000-07, Vol.18 (4), p.1278-1281
Main Authors: Maat, S., Liu, C., Eads, W., Umlor, M. T., Mankey, G. J.
Format: Article
Language:English
Subjects:
Annealing
Cobalt
Copper
Crystal orientation
Evaporation
Film growth
Molecular beam epitaxy
Silicon
Sputter deposition
Ultrathin films
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Summary:We report the results of a study of the structural properties of Co films deposited on Cu/H–Si(110). A Cu(111) buffer layer is formed by evaporation or ultrahigh vacuum sputter deposition on the H-terminated Si(110) surface. From consideration of bulk lattice constants, the Cu films undergo a 6% expansion along the [1, −1, 0] direction and a 13% compression along the [1, 1, −2] direction. The structure and annealing behavior of the Cu buffer layer was determined with a combination of low-energy electron diffraction (LEED) and Auger electron spectroscopy. The LEED patterns of Co films evaporated on this buffer layer are compared to Co films grown on a Cu(111) single crystal.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.582340