Via-hole etching for SiC

Four different F 2 -based plasma chemistries for high-rate etching of SiC under inductively coupled plasma (ICP) conditions were examined. Much higher rates (up to 8000  Å   min −1 ) were achieved with NF 3 and SF 6 compared with BF 3 and PF 5 , in good correlation with their bond energies and their...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-09, Vol.17 (5), p.2050-2054
Main Authors: Leerungnawarat, P., Hays, D. C., Cho, H., Pearton, S. J., Strong, R. M., Zetterling, C.-M., Östling, M.
Format: Article
Language:English
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Summary:Four different F 2 -based plasma chemistries for high-rate etching of SiC under inductively coupled plasma (ICP) conditions were examined. Much higher rates (up to 8000  Å   min −1 ) were achieved with NF 3 and SF 6 compared with BF 3 and PF 5 , in good correlation with their bond energies and their dissociation efficiency in the ICP source. Three different materials (Al, Ni, and indium–tin oxide) were compared as possible masks during deep SiC etching for through-wafer via holes. Al appears to produce the best etch resistance, particularly when O 2 is added to the plasma chemistry. With the correct choice of plasma chemistry and mask material, ICP etching appears to be capable of producing via holes in SiC substrates.
ISSN:0734-211X
1071-1023
1520-8567
1520-8567
DOI:10.1116/1.590870