Atomic layer deposition of TbF3 thin films

Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low. In this work, we present an ALD proces...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2021-03, Vol.39 (2)
Main Authors: Atosuo, Elisa, Ojala, Juha, Heikkilä, Mikko J., Mattinen, Miika, Mizohata, Kenichiro, Räisänen, Jyrki, Leskelä, Markku, Ritala, Mikko
Format: Article
Language:English
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Summary:Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low. In this work, we present an ALD process for TbF3 using tris(2,2,6,6-tetramethyl-3,5-heptanedionato)terbium and TiF4 as precursors. The films were grown at 175–350 °C. The process yields weakly crystalline films at the lowest deposition temperature, whereas strongly crystalline, orthorhombic TbF3 films are obtained at higher temperatures. The films deposited at 275–350 °C are exceptionally pure, with low contents of C, O, and H, and the content of titanium is below the detection limit (
ISSN:0734-2101
1520-8559
DOI:10.1116/6.0000790