Tunnel Metal/Barrier/Metal Structures For The Visualization Of High Frequency Electronic Signals

The luminescence of a planar tunnel metal/barrier/metal (MBM) structure with a 40-A-thick Al2O3 dielectric layer under the action of short-pulse voltage and hf electromagnetic emission is investigated. The optical response is greater than 10 -3 W of light per watt of hf signal in the measurement ran...

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Bibliographic Details
Published in:Optical Engineering 1986-02, Vol.25 (2), p.252225-252225
Main Authors: Kompanets, I. N, Luskinovich, P. N, Popov, Yu. M, Soboleva, E. M, Sobolev, A. G, Uskov, A. V
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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Summary:The luminescence of a planar tunnel metal/barrier/metal (MBM) structure with a 40-A-thick Al2O3 dielectric layer under the action of short-pulse voltage and hf electromagnetic emission is investigated. The optical response is greater than 10 -3 W of light per watt of hf signal in the measurement range of 500 to 1200 MHz. The MBM structure can be used as a fast-operating visualizer of hf signals.
ISSN:0091-3286
1560-2303
DOI:10.1117/12.7973809