Design approach and comparison of projection cameras for EUV lithography

This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of four-mirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for t...

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Bibliographic Details
Published in:Optical Engineering 2000-03, Vol.39 (3), p.792-802
Main Authors: Lerner, Scott A, Sasian, Jose M, Descour, Michael R
Format: Article
Language:English
Subjects:
aspherics
extreme ultraviolet
lithography
multilayers
optical design
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Summary:This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of four-mirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings. ©
ISSN:0091-3286
1560-2303
DOI:10.1117/1.602429